主要特點：

刻蝕用托盤采用高純無壓燒結(jié)碳化硅陶瓷材料，具有硬度高，耐腐蝕、耐磨損，使用壽命長等特點，并且產(chǎn)品精度高、晶圓外延層刻蝕均勻性好。

Main features

The tray used for etching is made of high purity sintered silicon carbide ceramics without pressure.It has the characteristics of high hardness, corrosion resistance, wear resistance, long service life, high precision and good etching uniformity of wafer epitaxy layer.

應(yīng)用領(lǐng)域：

應(yīng)用于LED 晶圓芯片的外延層薄膜材料（GaN、SiO2 等）的ICP 刻蝕制程、半導(dǎo)體擴散用精密陶瓷零件及半導(dǎo)體晶圓的MOCVD 外延制程。

Application

ICP etching process of epitaxial film materials(GaN, SiO 2, etc.) for LED wafer chips, precision ceramic parts for semiconductor diffusion and MOCVD epitaxy process for semiconductor wafers.

規(guī)格型號：

我公司可按照客戶的需求提供相應(yīng)陶瓷托盤產(chǎn)品，直徑范圍：Φ50~500mm。托盤盤厚度：3~20mm，并且可以根據(jù)客戶的要求進(jìn)行設(shè)計和制造各種非標(biāo)產(chǎn)品。

Specification:

Our company can provide the corresponding ceramic tray products according to the customer's needs, diameter range: 50~500mm. thickness:3~20mm, and can be designed and manufactured according to customer requirements of various non-standard products.